Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
复制标题
DOI：
10.1063/1.2926679
复制
发表时间：
2008-05
影响因子：
4
通讯作者：
H. Fan;G. Sun;S. Yang;P. F. Zhang;Riqing Zhang;H. Wei;C. Jiao;Xuchun Liu;Yu Chen;Q. Zhu
中科院分区：
文献类型：
--
作者：
H. Fan;G. Sun;S. Yang;P. F. Zhang;Riqing Zhang;H. Wei;C. Jiao;Xuchun Liu;Yu Chen;Q. Zhu
通过x射线光电子能谱直接测定了纤锌矿ZnO∕4H-SiC异质结的价带偏移（VBO）为1.61±0.23eV。从已知的VBO值推导出导带偏置为1.50±0.23eV，表明该异质结具有ii型带对准。基于ZnO、SiC和GaN异质结的传递特性，实验得到的VBO值与计算值吻合较好。
The valence band offset (VBO) of the wurtzite ZnO∕4H-SiC heterojunction is directly determined to be 1.61±0.23eV by x-ray photoelectron spectroscopy. The conduction band offset is deduced to be 1.50±0.23eV from the known VBO value, which indicates a type-II band alignment for this heterojunction. The experimental VBO value is confirmed and in good agreement with the calculated value based on the transitive property of heterojunctions between ZnO, SiC, and GaN.