OFF-State-Stress-Induced Ins ability in Switching Polycrystalline Silicon Thin-Film Transistors and Its Improvement by a Bridged-Grain Structure
OFF-State-Stress-Induced Ins ability in Switching Polycrystalline Silicon Thin-Film Transistors and Its Improvement by a Bridged-Grain Structure
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多晶硅薄膜晶体管的断态应力诱导绝缘能力及其通过桥接晶粒结构的改进
DOI：
10.1109/led.2018.2872350
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发表时间：
2018
影响因子：
4.9
通讯作者：
Hoi-Sing Kwok
中科院分区：
文献类型：
--
作者：
Meng Zhang;Yan Yan;Guijun Li;Sunbin Deng;Wei Zhou;Rongsheng Chen;Man Wong;Hoi-Sing Kwok
