Ar+-irradiation-induced damage in hydride vapor-phase epitaxy GaN films
Ar+-irradiation-induced damage in hydride vapor-phase epitaxy GaN films
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DOI：
10.1116/1.4922593
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发表时间：
2015-06
期刊：
影响因子：
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通讯作者：
Y. Nakano;D. Ogawa;Keiji Nakamura;Retsuo Kawakami;M. Niibe
中科院分区：
文献类型：
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作者：
Y. Nakano;D. Ogawa;Keiji Nakamura;Retsuo Kawakami;M. Niibe
采用肖特基势垒二极管研究了氩离子辐照下氢化物气相外延GaN薄膜的电学特性。与辐照前的原始值相比，由于产生供体型N空位缺陷，Ar+辐照倾向于大幅度增加GaN近表面区域的有效载流子浓度，直至~ 25 nm。更有趣的是，在传导带以下的~ 2.1,~ 2.9和~ 3.2 eV处，在随后的更深区域发现了受体型深能级缺陷，其中Ar+辐照引入的Ga空位被认为是内扩散的，并立即与氢结合。这些N空位和氢化Ga空位的形成主要是通过载流子生成、载流子捕获和/或载流子补偿来改变有效载流子浓度的深度分布。
The authors have investigated the electrical characteristics of hydride vapor-phase epitaxy GaN films exposed to Ar+ irradiation, employing Schottky barrier diodes. The Ar+ irradiation tends to largely increase the effective carrier concentration in the near surface region of GaN up to ∼25 nm, due to the generation of donor-type N vacancy defects, compared to the original value before the irradiation. More interestingly, acceptor-type deep-level defects are found to be formed at ∼2.1, ∼2.9, and ∼3.2 eV below the conduction band in the subsequently deeper region, in which Ga vacancies introduced by the Ar+ irradiation are considered to be in-diffused and immediately combined with hydrogen. These N vacancies and hydrogenated Ga vacancies formed are dominantly responsible for changing the depth profiles of the effective carrier concentration via the carrier generation, the carrier trapping, and/or carrier compensation.