Theory of Low-Temperature Hall Effect in Electron-Doped Cuprates
Theory of Low-Temperature Hall Effect in Electron-Doped Cuprates
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DOI：
10.1103/physrevb.72.214506
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发表时间：
2005-07
期刊：
影响因子：
--
通讯作者：
Jie Lin;A. Millis
中科院分区：
文献类型：
--
作者：
Jie Lin;A. Millis
本文用平均场法计算了电子掺杂铜氧化物如Pr 2-xCe xCuO 4+ delta的霍尔电导的T ~ 0极限。的数据被发现是定性一致的重建费米面预期密度波排序。密度波隙的大小被发现是大的。霍尔电阻在密度波有序的量子临界点处表现出非解析性，但发现异常的幅度小得不可观测。确定了对$R_H（B）$的量子临界贡献。计算和数据之间的定量差异仍然存在，这表明实验掺杂是不相同的$Ce$浓度$x$。
A mean field calculation of the $T\to 0$ limit of the Hall conductance of electron-doped cuprates such as $Pr_{2-x}Ce_xCuO_{4+\delta}$ is presented. The data are found to be qualitatively consistent with the reconstruction of the Fermi surface expected upon density wave ordering. The magnitude of the density wave gap is found to be large. The Hall resistance exhibits a nonanalyticity at the quantum critical point for density wave ordering, but the amplitude of the anomaly is found to be unobservably small. The quantum critical contribution to $R_H(B)$ is determined. Quantitative discrepancies between calculation and data remain, suggesting that the experimental doping is not identical to the $Ce$ concentration $x$.