Distributive Quasi-Ballistic Drift Diffusion Model Including Effects of Stress and High Driving Field
Distributive Quasi-Ballistic Drift Diffusion Model Including Effects of Stress and High Driving Field
复制标题
包括应力和高驱动场影响的分布准弹道漂移扩散模型
DOI：
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发表时间：
2015
影响因子：
3.1
通讯作者：
K. Kuhn
中科院分区：
文献类型：
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作者：
R. Kotlyar;R. Rios;C. Weber;T. Linton;M. Armstrong;K. Kuhn
本文提出了一种新的分布式准弹道漂移扩散（DD）TCAD模型应用于低迁移率无应力和高迁移率应力缩放pMOS器件的模拟研究。该模型在DD模拟器中实现，并用于研究电流驱动器的栅极长度依赖性。新模型捕获物理上正确的电位分布，并给出了正确的驱动电流限制弹道器件的线性电流响应和电流饱和源漏偏置条件。扩散和弹道传输连接使用弹道概率，这涉及到的基本时间尺度在问题中的平均能量弛豫时间。该模型捕捉弹道速度退化的扩散限制在线性源漏偏置。结果表明，采用分布式准弹道模型的DD模拟能够反映出现有弹道模型所忽略的高驱动场下的应力弹道驱动增益。
This paper presents a simulation study using a novel distributive quasi-ballistic drift diffusion (DD) TCAD model applied to low mobility unstressed and high mobility stressed scaled pMOS devices. The model is implemented in a DD simulator and used to study the gate length dependence of current drives. The new model captures the physically correct potential distribution and gives the correct drive current limit in ballistic devices for both linear current response and current saturation source-drain bias conditions. The diffusive and ballistic transport is connected using a ballistic probability, which relates to the fundamental time scale in the problem-the mean energy relaxation time. The model captures the ballistic velocity degradation from the diffusive limit at linear source-drain biases. It is shown that the DD simulation with the distributive quasi-ballistic model describes the stress ballistic drive gains at high driving field, which are missed by the existing ballistic models.