Comparison of charge collection efficiency of segmented silicon detectors made with FZ and MCz p-type silicon substrates
Comparison of charge collection efficiency of segmented silicon detectors made with FZ and MCz p-type silicon substrates
复制标题
FZ和MCz p型硅衬底分段硅探测器的电荷收集效率比较
DOI：
10.1016/j.nima.2008.03.090
复制
发表时间：
2008
期刊：
影响因子：
--
通讯作者：
Casse G
中科院分区：
文献类型：
--
作者：
Casse G
高阻p型硅已经成为最有希望用于粒子物理实验的细分段探测器材料之一，在粒子物理实验中，预计会出现高水平的辐射损伤。除了标准的高纯度浮区(FZ)硅外，现在还可以从工业上获得相对高电阻率的磁性Czocharlski(MCZ)。这种材料被认为可能比标准的FZ更耐辐射。这项工作比较了这些衬底材料在辐照前后用40 MHz模拟电子学进行的电荷收集效率测量。
High-resistivity p-type silicon has emerged as one of the most promising materials for the finely segmented detectors to be used in particle physics experiments where high levels of radiation damage are expected. Beside the standard high-purity float-zone (FZ) silicon, relatively high-resistivity magnetic Czocharlski (MCz) is now available from industry. This material has been proposed as possibly more radiation hard than the standard FZ. This work shows a comparison of these substrate materials in terms of charge collection efficiency measurements performed with 40MHz analogue electronics, before and after irradiation.