Atom manipulation method to substitute individual adsorbate atoms into a Si(111)-(7 × 7) substrate at room temperature
Atom manipulation method to substitute individual adsorbate atoms into a Si(111)-(7 × 7) substrate at room temperature
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DOI：
10.1063/1.5008503
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发表时间：
2017-12
影响因子：
4
通讯作者：
A. Yurtsever;M. Abe;S. Morita;Y. Sugimoto
中科院分区：
文献类型：
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作者：
A. Yurtsever;M. Abe;S. Morita;Y. Sugimoto
我们演示了一种在室温下使用原子力显微镜（AFM）尖端将单个吸附原子替换为Si(111)-（7 × 7）衬底的方法。我们发现在Si(111)-（7 × 7）衬底的半单元胞（huc）内扩散的单个Sn原子可以通过尖端的接近取代为Si结合原子位置，从而将固有的Si结合原子喷射到相邻huc的表面。原子力显微镜尖端在靠近HUC边界的某些位置向表面靠近，但随着Sn原子的扩散而稍微远离HUC，可以精确地控制Sn原子取代位点。用扫描隧道显微镜也证明了这种操作方法可以用Pb代替Si(111)-（7 × 7）表面的Si附着原子。该方法提供了一种在衬底提供的有限空间内扩散的吸附原子在某些位置诱导单原子取代掺杂的方法，这将允许对掺杂的控制。
We demonstrate a method to substitute individual adsorbate atoms into a Si(111)-(7 × 7) substrate using the tip of an atomic force microscope (AFM) at room temperature. We show that single Sn atoms diffusing within the half-unit-cells (HUCs) of the Si(111)-(7 × 7) substrate can be substituted into Si adatom sites via a close approach of the tip, whereby the intrinsic Si adatoms are ejected onto the surface of the adjacent HUCs. The Sn atom substitution sites can be precisely controlled by the approach of the AFM tip toward the surface at certain positions near the boundary of the HUCs but slightly shifted away from the HUC with the diffusing Sn atom. This manipulation method is also demonstrated to replace Si adatoms in the Si(111)-(7 × 7) surface with Pb using scanning tunneling microscopy. This method can provide a way to induce single-atom substitutional doping at certain positions from an adsorbate atom diffusing within a confined space provided by a substrate, which would allow for control of the dop...