A Facile Aqueous Solution Route for the Growth of Chalcogenide Perovskite BaZrS3 Films
A Facile Aqueous Solution Route for the Growth of Chalcogenide Perovskite BaZrS3 Films
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DOI：
10.3390/photonics10040366
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发表时间：
2023-03
期刊：
影响因子：
2.4
通讯作者：
S. Dhole;Xiucheng Wei;Haolei Hui;P. Roy;Zachary J Corey;Yongqiang Wang;W. Nie;Aiping Chen;Hao Zeng;Quanxi Jia
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文献类型：
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作者：
S. Dhole;Xiucheng Wei;Haolei Hui;P. Roy;Zachary J Corey;Yongqiang Wang;W. Nie;Aiping Chen;Hao Zeng;Quanxi Jia
原型的Chalcogenide Perovskite，BAZRS3（BZS），其直接带隙为1.7-1.8 eV，高化的化学稳定性和强烈的光 - 材料相互作用，在过去的几年中，它赢得了BAZRS3电影的造型。 ymer辅助沉积（PAD），在混合的CS2和AR大气中硫化的聚合物阳离子前体膜在900°C的加工温度下形成了单相的多晶BZS薄膜。 BZS膜在周围显示的光亮峰1.8 eV在530 nm的波长下在光照明下表现出光生的电流。
The prototypical chalcogenide perovskite, BaZrS3 (BZS), with its direct bandgap of 1.7–1.8 eV, high chemical stability, and strong light–matter interactions, has garnered significant interest over the past few years. So far, attempts to grow BaZrS3 films have been limited mainly to physical vapor deposition techniques. Here, we report the fabrication of BZS thin films via a facile aqueous solution route of polymer-assisted deposition (PAD), where the polymer-chelated cation precursor films were sulfurized in a mixed CS2 and Ar atmosphere. The formation of a single-phase polycrystalline BZS thin film at a processing temperature of 900 °C was confirmed by X-ray diffraction and Raman spectroscopy. The stoichiometry of the films was verified by Rutherford Backscattering spectrometry and energy-dispersive X-ray spectroscopy. The BZS films showed a photoluminescence peak at around 1.8 eV and exhibited a photogenerated current under light illumination at a wavelength of 530 nm. Temperature-dependent resistivity analysis revealed that the conduction of BaZrS3 films under the dark condition could be described by the Efros–Shklovskii variable range hopping model in the temperature range of 60–300 K, with an activation energy of about 44 meV.