Field Effect Diode (FED): A novel device for ESD protection in deep sub-micron SOI technologies
Field Effect Diode (FED): A novel device for ESD protection in deep sub-micron SOI technologies
复制标题
DOI：
10.1109/iedm.2006.346971
复制
发表时间：
2006-12
期刊：
影响因子：
--
通讯作者：
A. Salman;S. Beebe;M. Emam;M. Pelella;D. Ioannou
中科院分区：
文献类型：
--
作者：
A. Salman;S. Beebe;M. Emam;M. Pelella;D. Ioannou
本文介绍了场效应二极管（FED）作为一种新型器件，为SOI中的ESD保护提供了一种新的途径。器件参数被识别和优化，以实现最佳的ON和OFF行为。此外，作者提出了两种方法，FED可以用于ESD保护方案：在I/O钳位和在高压电源钳位
In this paper the authors present the field effect diode (FED) as a novel device with a new approach for ESD protection in SOI. Device parameters are identified and optimized to achieve optimum ON and OFF behavior. Furthermore, the authors present two ways the FED can be used in an ESD protection scheme: in I/O clamping and in a high-voltage supply clamp