A fully on-chip area-efficient CMOS low-dropout regulator with fast load regulation
A fully on-chip area-efficient CMOS low-dropout regulator with fast load regulation
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DOI：
10.1007/s10470-012-9841-8
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发表时间：
2012-08
影响因子：
1.4
通讯作者：
Suming Lai;Peng Li
中科院分区：
文献类型：
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作者：
Suming Lai;Peng Li
具有快速瞬态响应和小面积开销的全集成稳压器在现代SoC中的片上电源管理中具有很高的需求。提出了一种采用90 nm CMOS工艺的全片内低压差稳压器（LDO），该稳压器由多个反馈环路组成，可解决快速负载瞬态问题。LDO还采用有源频率补偿方案，仅需少量补偿电容即可保证稳定性。仿真结果表明，通过这些环路的协同作用，LDO将负载调节精度提高到3 μV/mA，输入1.2 V，输出1 V。对于上升/下降时间为100 ps的100 mA负载电流阶跃，LDO采用600 pF去耦电容加载时可实现最大输出压降和小于95 mV的过冲，平均偏置电流为408 μA。LDO还在PSRR和输出阻抗中提供幅度陷波，可更好地抑制电源涟漪的频谱分量和陷波频率附近的负载变化。Monte Carlo模拟表明，LDO对工艺和温度变化以及器件失配具有鲁棒性。LDO的总面积（不包括去耦电容器）约为0.005 mm 2。与现有解决方案的性能比较表明，提出的LDO实现了显着的改进。
Fully integrated voltage regulators with fast transient response and small area overhead are in high demand for on-chip power management in modern SoCs. A fully on-chip low-dropout regulator (LDO) comprised of multiple feedback loops to tackle fast load transients is proposed, designed and simulated in 90 nm CMOS technology. The LDO also adopts an active frequency compensation scheme that only needs a small amount of compensation capacitors to ensure stability. Simulation results show that, by the synergy of those loops, the LDO improves load regulation accuracy to 3 μV/mA with a 1.2 V input and 1 V output. For a 100 mA load current step with the rise/fall time of 100 ps, the LDO achieves maximum output voltage drop and overshoot of less than 95 mV when loaded by a 600 pF decoupling capacitor and consumes an average bias current of 408 μA. The LDO also features a magnitude notch in both its PSRR and output impedance that provides better suppression upon the spectral components of the supply ripple and the load variation around the notch frequency. Monte Carlo simulations are performed to show that the LDO is robust to process and temperature variations as well as device mismatches. The total area of the LDO excluding the decoupling capacitor is about 0.005 mm2. Performance comparisons with existing solutions indicate significant improvements the proposed LDO achieves.