10kV SiC MOSFET split output power module
10kV SiC MOSFET split output power module
复制标题
10kV SiC MOSFET分路输出功率模块
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
S. Munk‐Nielsen
中科院分区：
文献类型：
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作者：
S. Bęczkowski;Helong Li;C. Uhrenfeldt;E. Eni;S. Munk‐Nielsen
第一代10kV SiC MOSFET较差的体二极管性能和寄生导通现象限制了基于SiC的转换器的性能。使用分离输出拓扑可以潜在地缓解这两个问题。在本文中，我们对经典半桥和分离输出功率模块进行了比较。研究发现，导通期间的峰值电流显着降低，但在实施过程中出现了一些额外的挑战。
The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical half bridge and a split-output power module. It is found that the peak current during turn-on is reduced significantly, however some additional challenges arise during implementation.