In situ characterization of formation and growth of high-pressure phases in single-crystal silicon during nanoindentation
In situ characterization of formation and growth of high-pressure phases in single-crystal silicon during nanoindentation
复制标题
纳米压痕过程中单晶硅高压相的形成和生长的原位表征
DOI：
10.1007/s00339-016-9973-2
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
J. Yan
中科院分区：
文献类型：
--
作者：
H. Huang;J. Yan
硅的压力诱导中间相在力学、化学、光学和电学方面表现出独特的特性。阐明这些新相的形成和生长过程对于它们的制备和应用至关重要。为了原位表征单晶硅中高压相的形成和生长，提出了纳米压痕卸载保持过程中压头位移变化量（Δh）的定量参数。通过不同卸载保持力和加载/卸载速率下的纳米压痕实验，研究了它们对Δh的影响。结果表明：在最大压入载荷相同的情况下，Δ h随保持载荷的减小而增大，随加载/卸载速率的增大而增大。因此，Δ h值可以作为反映高压相形成和生长过程的一个指标。使用Δh，高压相的成核的初始位置、它们的生长以及它们与加载/卸载速率的相关性是可预测的。
Pressure-induced intermediate phases of silicon exhibit unique characteristics in mechanics, chemistry, optics, and electrics. Clarifying the formation and growth processes of these new phases is essential for the preparation and application of them. For in situ characterization of the formation and growth of high-pressure phases in single-crystal silicon, a quantitative parameter, namely displacement change of indenter (Δh) during the unloading holding process in nanoindentation, was proposed. Nanoindentation experiments under various unloading holding loads and loading/unloading rates were performed to investigate their effects on Δh. Results indicate that Δhvaries significantly before and after the occurrence of pop-out; for the same maximum indentation load, it tends to increase with the decrease in the holding load and to increase with the increase in the loading/unloading rate. Thus, the value of Δhcan be regarded as an indicator that reflects the formation and growth processes of the high-pressure phases. Using Δh, the initial position for the nucleation of the high-pressure phases, their growth, and their correlation to the loading/unloading rate were predictable.