New approach to the design and the fabrication of THz Schottky barrier diodes
New approach to the design and the fabrication of THz Schottky barrier diodes
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DOI：
10.1109/22.231645
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发表时间：
1993-04
影响因子：
4.3
通讯作者：
A. Jeleński;A. Grüb;V. Krozer;H. Hartnagel
中科院分区：
文献类型：
--
作者：
A. Jeleński;A. Grüb;V. Krozer;H. Hartnagel
描述了在太赫兹频率范围内混频应用的具有接近理想的电学和噪声特性的GaAs肖特基势垒二极管。描述这些特性的传统公式仅在有限的正向偏置范围内有效，对应于远小于亚毫米混频条件下的工作电流的电流。因此，给出了金属-半导体结在全偏压范围内I-V特性和C-V特性的一般解析表达式。提出了一种新的二极管数值模型，该模型不仅考虑了结点处发生的电流相关复合和漂移/扩散速度等现象，而且考虑了非耗尽外延层中电子迁移率和电子温度的变化。本文描述了一种基于电解脉冲刻蚀和原位镀铂形成肖特基接触的二极管制造工艺。用这种工艺制作的直径为1微米的肖特基势垒二极管已在650 GHz的波导室温混频器中显示出良好的效果。>；
GaAs Schottky barrier diodes with near-ideal electrical and noise characteristics for mixing applications in the terahertz frequency range are described. The conventional formulas describing these characteristics are valid only in a limited forward bias range, corresponding to currents much smaller than the operating currents under submillimeter mixing conditions. Therefore, generalized analytical expressions for the I-V and C-V characteristics of the metal-semiconductor junction in the full bias range are given. A new numerical diode model is presented which takes into account not only the phenomena occurring at the junction, such as current dependent recombination and drift/diffusion velocities, but also the variations of electron mobility and electron temperature in the undepleted epi-layer. A diode fabrication process based on the electrolytic pulse etching of GaAs in combination with an in situ platinum plating for the formation of the Schottky contacts is described. Schottky barrier diodes with a diameter of 1 mu m fabricated by this process have already shown excellent results in a 650-GHz waveguide mixer at room temperature. >