Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy
Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy
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DOI：
10.1063/1.4813598
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发表时间：
2013-07-15
影响因子：
4
通讯作者：
Damilano, Benjamin
中科院分区：
文献类型：
--
作者：
Brochen, Stephane;Brault, Julien;Damilano, Benjamin
利用分子束外延技术在GaN模板上生长了p型GaN：Mg层，并在此基础上进行了霍尔效应和电容-电压C（V）测量。通过二次离子质谱测量的作为镁掺入的函数的自由空穴密度和有效掺杂剂浓度N-A - N-D清楚地揭示了高达90%的镁掺杂效率和受主电离能Ea与受主浓度N-A的强依赖性。这些实验观察突出了245 +/- 25 meV的孤立受体结合能，在高受体浓度下，与室温下空穴浓度接近10（19）cm（-3）的p型GaN：Mg层的实现兼容。(C)2013 AIP Publishing LLC.
Hall effect and capacitance-voltage C(V) measurements were performed on p-type GaN:Mg layers grown on GaN templates by molecular beam epitaxy with a high range of Mg-doping concentrations. The free hole density and the effective dopant concentration N-A - N-D as a function of magnesium incorporation measured by secondary ion mass spectroscopy clearly reveal both a magnesium doping efficiency up to 90% and a strong dependence of the acceptor ionization energy Ea with the acceptor concentration N-A. These experimental observations highlight an isolated acceptor binding energy of 245 +/- 25 meV compatible, at high acceptor concentration, with the achievement of p-type GaN: Mg layers with a hole concentration at room temperature close to 10(19) cm(-3). (C) 2013 AIP Publishing LLC.