Surface stress and the normal mode of vibration of thin crystals :GaAs
Surface stress and the normal mode of vibration of thin crystals :GaAs
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DOI：
10.1063/1.88231
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发表时间：
1975-05
影响因子：
4
通讯作者：
J. Lagowski;H. Gatos;E. Sproles
中科院分区：
文献类型：
--
作者：
J. Lagowski;H. Gatos;E. Sproles
发现厚度约15μm以下的（111）砷化镓晶片的正常振动模式在很大程度上取决于表面处理和周围环境气氛。这种相关性归因于与表面应力σs直接相关的效应。结果表明，可以根据振动的固有频率来评估σs。在室内大气环境中，经蚀刻和未经蚀刻的（111）砷化镓晶片在〈110〉方向的σs值分别为325和570达因/厘米。进一步证明，由于吸附过程（吸附瞬态）引起的表面应力瞬态可以通过振动固有频率的相应变化来确定。
The normal mode of vibration of (111) GaAs wafers with a thickness below about 15 μm was found to depend strongly on the surface preparation and on the ambient atmosphere. This dependence was attributed to effects directly related to the surface stress σs. It was shown that σs can be evaluated from the natural frequency of vibration. The values of σs, in the 〈110〉 direction, for etched and unetched (111) GaAs wafers in room atmosphere were found to be 325 and 570 dyn/cm, respectively. It was further demonstrated that surface stress transients due to the adsorption processes (adsorption transients) can be determined by corresponding changes in the natural frequency of vibration.