Extraction of Isothermal Condition and Thermal Network in UTBB SOI MOSFETs
Extraction of Isothermal Condition and Thermal Network in UTBB SOI MOSFETs
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DOI：
10.1109/led.2012.2205659
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发表时间：
2012-08
影响因子：
4.9
通讯作者：
M. A. Karim;Y. Chauhan;S. Venugopalan;A. Sachid;D. Lu;B. Nguyen;O. Faynot;A. Niknejad;C. Hu
中科院分区：
文献类型：
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作者：
M. A. Karim;Y. Chauhan;S. Venugopalan;A. Sachid;D. Lu;B. Nguyen;O. Faynot;A. Niknejad;C. Hu
在这封信中，我们提出了一个热网络提取方法来表征自热效应，使用双端口RF测量。我们展示了仅使用光谱的自加热（热）占主导地位的范围来确定等温条件的技术。我们使用一个自洽的自加热提取计划，同时使用真实的和虚部的漏端口导纳参数。研究了适当的热网络，证实了具有绝缘体和埋氧层的短沟道绝缘体上硅MOSFET存在大量的自加热温升。
In this letter, we present a thermal network extraction methodology to characterize self-heating effect using two-port RF measurements. We show the technique of determining isothermal condition using only the self-heating (thermal) dominated range of the spectrum. We use a self-consistent self-heating extraction scheme using both the real and imaginary parts of drain port admittance parameters. Appropriate thermal network is investigated, and a large amount of temperature rise due to self-heating is confirmed for short channel silicon-on-insulator MOSFETs with ultrathin body and buried oxide.