Hybrid CMOS and Pseudo-CMOS Organic Memory for Flexible Sensors
Hybrid CMOS and Pseudo-CMOS Organic Memory for Flexible Sensors
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DOI：
10.1109/jsen.2022.3153714
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发表时间：
2023-10
影响因子：
4.3
通讯作者：
Zhaoxing Qin;K. Kuribara;Y. Ogasahara;Takashi Sato
中科院分区：
文献类型：
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作者：
Zhaoxing Qin;K. Kuribara;Y. Ogasahara;Takashi Sato
在本文中，我们提出并阐明了一种新的静态随机存取存储器（SRAM）的灵活的电子系统使用低电压有机薄膜晶体管。SRAM可用于本地数据存储和传感器产生的信号的后处理。这对于真正灵活的系统至关重要。该SRAM采用混合CMOS和伪CMOS设计，以提高稳定性。基于CMOS设计风格的存储器单元利用p型存取晶体管来提高面积效率和稳定性。基于伪CMOS设计风格的降级缓解电路延长了保持时间。所提出的电路，它是由几个基本的逻辑门，易于实现，并占用最小的版图面积。SRAM电路可以自检测退化并自动执行过程以在必要的时间段减轻器件退化。我们通过测试芯片测量确认了所提出的存储器中关键部件的操作。此外，已验证的退化缓解电路的有效性。
In this paper, we propose and elucidate a novel static random access memory (SRAM) for flexible electronic systems using low-voltage organic thin-film transistors. The SRAM can be used for local data storage and post-processing of the signals generated by sensors. This is essential for truly flexible systems. The proposed SRAM utilizes hybrid CMOS and pseudo-CMOS design to enhance stability. The memory cells based on CMOS design style utilize p-type access transistors to improve area efficiency and stability. A degradation-mitigation circuit, based on pseudo-CMOS design style, extends retention time. The proposed circuit, which is comprised of few basic logic gates, is easy to implement and occupies minimum layout area. The SRAM circuit can self-detect degradation and automatically perform a process to mitigate device degradation at the necessary time periods. We confirm the operation of key components in the proposed memory via test chip measurements. Additionally, the effectiveness of the degradation-mitigation circuit has been verified.