Fabrication of Bragg gratings in subwavelength diameter As2Se3 chalcogenide wires
Fabrication of Bragg gratings in subwavelength diameter As2Se3 chalcogenide wires
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DOI：
10.1364/ol.36.002886
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发表时间：
2011-08-01
期刊：
影响因子：
3.6
通讯作者：
Baker, Chams
中科院分区：
文献类型：
--
作者：
Ahmad, Raja;Rochette, Martin;Baker, Chams
提出并演示了在亚波长直径的硫化物（As2Se3）导线上刻录布拉格光栅。利用波长λ (w) = 633nm的He-Ne激光，改进了在1550nm波段写入Bragg光栅反射器的横向全息方法。光栅在透射时的消光比达到40 dB，光致折射率δ n的负变化近似于10（-2）。在硫族化物微线中嵌入布拉格光栅将使非线性光学和近红外到中红外波段传感的新器件的制造成为可能。(C) 2011美国光学学会
The inscription of Bragg gratings in chalcogenide (As2Se3) wires with subwavelength diameter is proposed and demonstrated. A modified transverse holographic method employing He-Ne laser light at a wavelength of lambda(w) = 633nm allows the writing of Bragg grating reflectors in the 1550 nm band. The gratings reach an extinction ratio of 40 dB in transmission and a negative photo-induced index change of Delta n similar to 10(-2). The inscription of Bragg gratings in chalcogenide microwires will enable the fabrication of new devices with applications in nonlinear optics and sensing in the near- to mid-IR region of wavelengths. (C) 2011 Optical Society of America