Position-Controlled III-V Compound Semiconductor Nanowire Solar Cells by Selective-Area Metal-Organic Vapor Phase Epitaxy
Position-Controlled III-V Compound Semiconductor Nanowire Solar Cells by Selective-Area Metal-Organic Vapor Phase Epitaxy
复制标题
DOI：
10.1007/s13280-012-0266-5
复制
发表时间：
2012-03-01
期刊：
影响因子：
6.5
通讯作者：
Tomioka, Katsuhiro
中科院分区：
文献类型：
--
作者：
Fukui, Takashi;Yoshimura, Masatoshi;Tomioka, Katsuhiro
我们通过选择性区域金属有机气相外延展示了位置可控的III - V族半导体纳米线（NWs）及其在太阳能电池中的应用。InP核壳纳米线太阳能电池实现了4.23%的效率。我们在无衬底的情况下形成了一种“柔性纳米线阵列”，与传统的薄膜光伏器件相比，它具有节约自然资源的优势。我们提出并讨论了效率超过50%的四结纳米线太阳能电池。
We demonstrate position-controlled III-V semiconductor nanowires (NWs) by using selective-area metalorganic vapor phase epitaxy and their application to solar cells. Efficiency of 4.23% is achieved for InP core-shell NW solar cells. We forma 'flexible NW array' without a substrate, which has the advantage of saving natural resources over conventional thin film photovoltaic devices. Four junction NW solar cells with over 50% efficiency are proposed and discussed.