Graphene Ribbon Growth on Structured Silicon Carbide
Graphene Ribbon Growth on Structured Silicon Carbide
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DOI：
10.1002/andp.201700052
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发表时间：
2017-08
影响因子：
2.4
通讯作者：
A. Stöhr;J. Baringhaus;J. Aprojanz;S. Link;C. Tegenkamp;Y. Niu;A. Zakharov;Chaoyu Chen;J. Avila;M. Asensio;U. Starke
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文献类型：
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作者：
A. Stöhr;J. Baringhaus;J. Aprojanz;S. Link;C. Tegenkamp;Y. Niu;A. Zakharov;Chaoyu Chen;J. Avila;M. Asensio;U. Starke
结构碳化硅被认为是制备边缘特定的石墨烯纳米带阵列的理想模板，可用作石墨烯晶体管的基材。我们利用电子束曝光法和反应离子刻蚀技术在碳化硅表面制备了周期性的纳米尺度条状台面阵列。在原子力显微镜(AFM)的监测下，随后的外延石墨烯的生长在基面台面和刻面条纹壁之间进行了区分。显微镜低能电子衍射(μ-LEED)表明，刻面台面侧壁上的石墨烯带与基面石墨烯呈外延关系生长，在刻面边缘呈扶手椅取向。用角度分辨光电子能谱(ARPES)鉴定，π带体系呈现出与单层石墨烯相对应的类狄拉克形状的线状带。
Structured Silicon Carbide was proposed to be an ideal template for the production of arrays of edge specific graphene nanoribbons (GNRs), which could be used as a base material for graphene transistors. We prepared periodic arrays of nanoscaled stripe‐mesas on SiC surfaces using electron beam lithography and reactive ion etching. Subsequent epitaxial graphene growth by annealing is differentiated between the basal‐plane mesas and the faceting stripe walls as monitored by means of atomic force microscopy (AFM). Microscopic low energy electron diffraction (μ‐LEED) revealed that the graphene ribbons on the facetted mesa side walls grow in epitaxial relation to the basal‐plane graphene with an armchair orientation at the facet edges. The π‐band system of the ribbons exhibits linear bands with a Dirac like shape corresponding to monolayer graphene as identified by angle‐resolved photoemission spectroscopy (ARPES).