Effect of Oxygen Pressure on Structural and Magnetic Properties of YIG Thin Films

Effect of Oxygen Pressure on Structural and Magnetic Properties of YIG Thin Films
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DOI：
10.1063/1.4710205
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发表时间：
2012-06
期刊：
--
影响因子：
--
通讯作者：
S. Katlakunta;S. Murthy
S. Katlakunta;S. Murthy
中科院分区：
其他
文献类型：
--
作者：
S. Katlakunta;S. Murthy

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研究了氧分压(PO2)对射频溅射法在硅衬底上生长YIG薄膜的影响。在300K时沉积的薄膜为非晶态。这些薄膜的晶化是在空气中800℃/1hr的温度下进行的。结构、微结构和磁性能依赖于PO2。
The effect of oxygen pressure (PO2) on the Yttrium Iron Garnet (YIG) thin films were grown on silicon substrate by rf sputtering method was studied. The as-deposited films at 300K were amorphous in nature. The crystallization of these films was achieved by annealing at a temperature of 800°C/1hr in air. The structural, microstructural and magnetic properties were found to be dependent on PO2.