Selective growth of ZnO nanorods by the hydrothermal technique

Selective growth of ZnO nanorods by the hydrothermal technique
复制标题

水热技术选择性生长ZnO纳米棒

DOI:
10.1088/2043-6262/4/1/015008
复制
发表时间:
2013
期刊:
Advances Natural Sciences: Nanoscience and Nanotechnology
影响因子:
--
通讯作者:
Surendra N. Sahu and Kazuo Uchida
Surendra N. Sahu and Kazuo Uchida
中科院分区:
--
文献类型:
--
作者:
Shinji Nozaki;Sachin N. Sarangi;Surendra N. Sahu and Kazuo Uchida

文献摘要

相似文献

采用硝酸锌(Zn(NO3)2)和六亚甲基四胺((CH2)6N4)水热法,在银图案化和光刻胶图案化的工程基底上选择性生长氧化锌纳米棒。纳米棒的生长受到所使用的衬底的影响。纳米棒垂直生长在GaN衬底上,而不是在Si衬底上,因为晶格失配。然而,由于无论使用什么衬底,纳米棒都生长在厚Ag膜上,因此在Si衬底上沉积厚Ag膜以制备Ag图案化衬底。因此,纳米棒仅在Ag垫上生长。当Ag焊盘的尺寸较小时,例如100 nm× 100 nm,在Ag焊盘上生长单个纳米棒。作为另一工程衬底,通过电子束光刻将光致抗蚀剂图案化以在蓝宝石上GaN衬底上制备孔阵列。当孔尺寸为10 nm× 10 nm及更大时,Zn(NO3)2和((CH2)6N4)的浓度均能使所有的孔被单个纳米棒填充。
Zinc oxide nanorods were selectively grown on engineered substrates, Ag-patterned and photoresist-patterned substrates, by the hydrothermal technique using zinc nitrate (Zn (NO 3) 2) and hexamethylenetetramine ((CH 2) 6 N 4). The nanorod growth was affected by the substrate to be used. The nanorods were vertically grown on a GaN substrate but not on a Si substrate because of lattice mismatch. However, since the nanorods were grown on a thick Ag film no matter what substrate was used, a thick Ag film was deposited on a Si substrate to prepare the Ag-patterned substrate. Accordingly, the nanorods were grown only on the Ag pads. When the sizes of Ag pads were small such as 100 nm× 100 nm, one single nanorod was grown on an Ag pad. As another engineered substrate, the photoresist was patterned to prepare an array of holes on a GaN-on-sapphire substrate by e-beam lithography. When the hole size was 10 nm× 10 nm and higher, concentrations of Zn (NO 3) 2 and ((CH 2) 6 N 4) were employed, all holes were successfully filled with a single nanorod.