Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors
Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors
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用于 IV 族半导体量子异质集成的原子控制等离子体处理
DOI：
10.1149/1.3633311
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
M.Sakuraba and J.Murota
中科院分区：
文献类型：
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作者：
L. Chen;F. Matsukura;and H. Ohno;M.Sakuraba and J.Murota
为了改善高Ge含量应变Si1-xGex/Si空穴共振隧穿二极管的负微分电导(NDC)特性，研究了应变Si1-xGex/Si量子异质结的原子控制形成.最近，特别是为了抑制高Ge组分异质界面上粗糙度的产生，在Si0之后，用400℃的较低温度下的Si2H6反应而不是500℃下的SiH4反应来沉积Si势垒。42Ge0。58%的增长。NDC特性表明，与500oC的SiH4相比，400oC的Si2H6能有效地增大11-295K的峰谷电流差。热离子发射的主导特性表明，引入更大的势垒高度可能通过抑制热离子发射电流来增强室温下的NDC。在此基础上，本文综述了原子控制Si/应变Si1-xGex异质结在Si(100)衬底上生长RTDS的先进工艺。第四类半导体的高质量量子异质结构，如纳米级厚应变Si1-xGex/Si，实现了室温共振隧道二极管(RTD)[1]，对于特定应用的集成，如高频振荡或高速开关[2-10]到Si LSI中具有重要意义。为了提高室温下的RTD性能，不仅要通过高质量的异质结[11]，增加异质结中Ge的含量(即应变和能带不连续)是有效的途径之一。本文研究了具有Si/应变Si1-xGex/Si(100)异质结的p型RTD[1，11-16]，并证明了引入具有原子序平坦异质界面的高Ge组分超薄Si1-xGex层可以有效地改善室温下的负微分电导(NDC)特性。此外，还研究了纳米级厚硅势垒的空穴隧穿特性，以探索克服现有材料和结构的局限性的可能性。在这
Atomically controlled formation of strained Si1-xGex/Si quantum heterostructure was investigated in order to improve negative differential conductance (NDC) characteristics of high-Ge-fraction strained Si1-xGex/Si hole resonant tunneling diode with nanometerorder thick strained Si1-xGex and unstrained Si layers. Recently, especially to suppress the roughness generation at heterointerfaces for higher Ge fraction, Si barriers were deposited using Si2H6 reaction at a lower temperature of 400 oC instead of SiH4 reaction at 500 oC after the Si0. 42Ge0. 58 growth. NDC characteristics show that difference between peak and valley currents is effectively enhanced at 11-295 K by using Si2H6 at 400 oC, compared with that using SiH4 at 500 oC. Thermionic-emission dominant characteristics suggests a possibility that introduction of larger barrier height enhances the NDC at room temperature by suppression of thermionic-emission current. In this paper, based on our results, advanced epitaxial growth process of RTDs with atomically controlled Si/strained Si1-xGex heterostructures on Si (100) are reviewed.High-quality quantum heterostructure of group IV semiconductors such as nanometer-order thick strained Si1-xGex/Si has enabled room-temperature resonant tunneling diode (RTD)[1], and it is important for integration of specified applications, eg high frequency oscillation or high speed switching [2-10] into Si LSIs. In order to improve the RTD performance at room temperature, not only by high quality of heterostructure [11], increase of Ge fraction (ie strain and band discontinuity) in the heterostructure is one of the effective ways. In this work, p-type RTD with Si/strained Si1-xGex/Si (100) heterostructure has been investigated [1, 11-16], and it has been demonstrated that introduction of high-Ge-fraction ultrathin Si1-xGex layers with atomicorder flat heterointerfaces is effective to improve negative differential conductance (NDC) characteristics at room temperature (Fig. 1). Additionally, hole tunneling properties through nanometer-order thick Si barriers have been also investigated to explore possibility to overcome limitations of the present materials and structures. In this