Recent progress in CdTe and CdZnTe detectors
Recent progress in CdTe and CdZnTe detectors
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DOI：
10.1109/23.958705
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发表时间：
2001-08-01
影响因子：
1.8
通讯作者：
Watanabe, S
中科院分区：
文献类型：
--
作者：
Takahashi, T;Watanabe, S
碲化镉（CdTe）和碲锌镉（CdZnTe）一直被视为用于硬X射线和伽马射线探测的有前景的半导体材料。这些材料的高原子序数（镉的原子序数Z = 48，碲的原子序数Z = 52）使其相较于硅具有更高的量子效率。较大的带隙能（禁带宽度Eg约为1.5电子伏特）使我们能够在室温下操作探测器。然而，这些探测器中大量的电荷损失导致能量分辨率降低。这个问题是由于空穴的迁移率低和寿命短而产生的。最近，基于晶体生产和电极设计方面的进展，在改善光谱特性方面已经取得了显著的改进。在本文中，我们总结了1）CdTe和CdZnTe半导体探测器的优缺点以及2）提高能量分辨率和光峰效率的技术。还简要讨论了这些成像探测器在未来硬X射线和伽马射线天文任务中的应用。
Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and gamma -ray detection. The high atomic number of the materials (Z(Cd) = 48, Z(Te) = 52) gives a high quantum efficiency in comparison with Si. The large bandgap energy (Eg similar to 1.5 eV) allows us to operate the detector at room temperature. However, a considerable amount of charge loss in these detectors produces a reduced energy resolution. This problem arises due to the low mobility and short lifetime of holes. Recently, significant improvements have been achieved to improve the spectral properties based on the advances in the production of crystals and in the design of electrodes. In this paper, we summarize 1) advantages and disadvantages of CdTe and CdZnTe semiconductor detectors and 2) the technique for improving energy resolution and photopeak efficiencies. Applications of these imaging detectors in future hard X-ray and gamma -ray astronomy missions are briefly discussed.