Bandwidth enhancement in an InGaN/GaN three-section superluminescent diode for optical coherence tomography
Bandwidth enhancement in an InGaN/GaN three-section superluminescent diode for optical coherence tomography
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DOI：
10.1063/5.0010795
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发表时间：
2020-08
影响因子：
4
通讯作者：
G. R. Goldberg;Daehyun Kim;Richard J. E. Taylor;D. Childs;P. Ivanov;N. Ozaki;K. Kennedy;K. Groom;Y. Harada;R. Hogg
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文献类型：
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作者：
G. R. Goldberg;Daehyun Kim;Richard J. E. Taylor;D. Childs;P. Ivanov;N. Ozaki;K. Kennedy;K. Groom;Y. Harada;R. Hogg
本文报道了InGaN基蓝光（430 nm）超辐射发光二极管的光电特性。后吸收器部分和增益部分的偏置条件进行了探讨，在增强和最大化的光谱带宽。我们证明，更广泛的发射可以得到一个短路，而不是一个开路吸收部分，并与两个有源区在不同的电流密度，而不是一个单一的有源接触。在最佳驱动条件下，在430 nm处获得20 nm的−3 dB线宽。对器件发射光谱的分析表明，在光学相干层析成像系统中，可以获得~ 3.4 μm的轴向分辨率。
In this paper, the optoelectronic properties of InGaN-based blue (430 nm) superluminescent light-emitting diodes with a multi-section, three contact design are reported. The bias conditions of the rear absorber section and gain sections are explored in terms of enhancing and maximizing spectral bandwidth. We demonstrate that broader emission can be obtained with a short circuit, rather than an open circuit absorber section, and with two active regions at different current densities as opposed to a single active contact. Under optimal drive conditions, a −3 dB linewidth of 20 nm is obtained at 430 nm. Analysis of the device emission spectrum indicates that an axial resolution of ∼3.4 μm may be obtained in an optical coherence tomography system.