Effect of H 2 content on reliability of ultrathin in-situ steam generated (ISSG) SiO 2
Effect of H 2 content on reliability of ultrathin in-situ steam generated (ISSG) SiO 2
复制标题
H 2 含量对超薄原位蒸汽生成(ISSG) SiO 2 可靠性的影响
DOI：
10.1109/55.863100
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
H. Huff
中科院分区：
文献类型：
--
作者：
T. Luo;M. Laughery;G. Brown;H. Alshareef;V. Watt;A. Karamcheti;M. Jackson;H. Huff
这封信证明了氧化过程中H/sub 2/百分比对原位蒸汽生成（ISSG）氧化物质量的影响。结果表明，从应力诱导漏电流（SILC）和击穿电荷（Q/sub BD/）的角度来看，ISSG氧化层的可靠性随着H/sub 2/百分比的增加而显著提高。ISSG氧化物的这种增强的可靠性可以通过减少结构过渡层内的SiO/sub 2/网络中的缺陷（例如Si悬挂键、弱Si-Si和应变Si-O键）来解释，所述缺陷通过假设由于氢的存在而从分子氧解离的高活性氧原子来减少。
This letter demonstrates the effect of H/sub 2/ percentage during oxidation on the quality of the in-situ steam generated (ISSG) oxide. Our results indicate the reliability of ISSG oxide is considerably improved as the H/sub 2/ percentage increases, from the viewpoint of stress-induced leakage current (SILC) and charge-to-breakdown (Q/sub BD/). Such enhanced reliability of the ISSG oxide may be explained by the reduction of defects in the SiO/sub 2/ network within the structural transition layer, such as Si dangling bonds, weak Si-Si and strained Si-O bonds, by highly reactive oxygen atoms which are hypothesized to be dissociated from the molecular oxygen due to the presence of hydrogen.