Optimization of ZnO Films for Amorphous Silicon Solar Cells
Optimization of ZnO Films for Amorphous Silicon Solar Cells
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DOI：
10.1143/jjap.32.3764
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发表时间：
1993-09
影响因子：
1.5
通讯作者：
Katsuya Tabuchi;W. W. Wenas-W.;A. Yamada;M. Takahashi
中科院分区：
文献类型：
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作者：
Katsuya Tabuchi;W. W. Wenas-W.;A. Yamada;M. Takahashi
将金属有机化学气相沉积(MOCVD)法制备的氧化锌薄膜作为透明导电氧化物(TCO)应用于非晶硅太阳电池。最佳的B2H6流量和膜层厚度分别为0.5和2.0µm。我们还提出了一种在a-Si太阳电池制备前对氧化锌薄膜进行预退火的技术，结果表明，使用该技术可以提高开路电压。此外，我们还制作了一种新型的p-i-na-Si太阳电池结构，在a-Si和金属电极之间有0.1微米厚的氧化锌薄膜。理论计算和实验结果表明，在600~800 nm波长范围内，氧化锌/银背反射器的反射率高于银电极。结果，实现了长波区收集效率的显著提高，导致短路电流增加约1 mA/cm2。同时采用氧化锌薄膜的预退火工艺和氧化锌/银/铝背反射层，获得了11.9%的转换效率(VOC=0.893 V，ISC=18.6 mA/cm~2，FF=0.715)。
ZnO films prepared by the metalorganic chemical vapor deposition (MOCVD) method were applied to amorphous silicon (a-Si) solar cells as a transparent conductive oxide (TCO). The B2H6 flow rate and the thickness of the film were optimized at 0.5 µmol/min and 2.0 µm, respectively. We also proposed a preannealing technique of the ZnO film before fabrication of a-Si solar cells, and it was shown that the open circuit voltage was increased with use of this technique. Furthermore, we fabricated a novel p-i-n a-Si solar cell structure, which had a 0.1-µm-thick ZnO layer between a-Si and the metal electrode. Theoretical calculation and experimental results proved that the reflectance of the ZnO/Ag back reflector was higher than that of the Ag electrode at wavelengths between 600 nm and 800 nm. As a result, a marked enhancement of collection efficiencies in the long-wavelength region was achieved, resulting in the increase of the short-circuit current of about 1 mA/cm2. Using both the preannealing technique of ZnO film and a ZnO/Ag/Al back reflector, a conversion efficiency of 11.9% (Voc=0.893 V, Isc=18.6 mA/cm2, FF=0.715) was obtained.