Dually Active Silicon Nanowire Transistors and Circuits with Equal Electron and Hole Transport
Dually Active Silicon Nanowire Transistors and Circuits with Equal Electron and Hole Transport
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DOI：
10.1021/nl401826u
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发表时间：
2013-09-01
期刊：
影响因子：
10.8
通讯作者：
Weber, Walter M.
中科院分区：
文献类型：
--
作者：
Heinzig, Andre;Mikolajick, Thomas;Weber, Walter M.
我们提出了新颖的多功能纳米电路，纳米线晶体管，具有独特的功能平等的电子和空穴传导。因此，强制性的要求，以产生具有单一类型的晶体管的节能电路是第一次显示。与迄今为止报道的任何晶体管相反，无论采用何种技术和半导体材料，这里所示的双有源硅纳米线沟道都表现出电子（n型）和空穴（p型）传导的电流电压器件特性的理想对称性，如在可比电流、导通阈值电压和开关斜率方面所评估的。对称性的关键使能因素是电荷载流子隧穿传输的选择性可调性，这是由结的纳米级尺寸和径向压缩应变的应用的组合所呈现的。为了证明这一概念的优势，我们将双有源晶体管集成到可级联和多功能的一维电路串中。纳米电路确认能量有效的切换，并且可以进一步被电配置为提供四种不同类型的操作模式，相比之下，当采用具有相同数量的晶体管的常规电子器件时，提供单个操作模式。
We present novel multifunctional nanocircuits built from nanowire transistors that uniquely feature equal electron and hole conduction. Thereby, the mandatory requirement to yield energy efficient circuits with a single type of transistor is shown for the first time. Contrary to any transistor reported up to date, regardless of the technology and semiconductor materials employed, the dually active silicon nanowire channels shown here exhibit an ideal symmetry of current voltage device characteristics for electron (n-type) and hole (p-type) conduction as evaluated in terms of comparable currents, turn-on threshold voltages, and switching slopes. The key enabler to symmetry is the selective tunability of the tunneling transmission of charge carriers as rendered by the combination of the nanometer-scale dimensions of the junctions and the application of radially compressive strain. To prove the advantage of this concept we integrated dually active transistors into cascadable and multifunctional one-dimensional circuit strings. The nanocircuits confirm energy efficient switching and can further be electrically configured to provide four different types of operation modes compared to a single one when employing conventional electronics with the same amount of transistors.