Investigation of crystallinity and planar defects in the Si nanowires grown by vapor–liquid–solid mode using indium catalyst for solar cell applications
Investigation of crystallinity and planar defects in the Si nanowires grown by vapor–liquid–solid mode using indium catalyst for solar cell applications
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研究太阳能电池应用中使用铟催化剂通过气-液-固模式生长的硅纳米线的结晶度和平面缺陷
DOI：
10.7567/jjap.55.01ae03
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发表时间：
2015
影响因子：
1.5
通讯作者：
M. Konagai
中科院分区：
文献类型：
--
作者：
M. A. Khan;Y. Ishikawa;I. Kita;A. Tani;H. Yano;T. Fuyuki;M. Konagai
无堆叠缺陷和无平面缺陷（孪晶面）的硅纳米线在载流子传输和纳米级器件应用中是必不可少的。在本文中，在气-液-固（VLS）模式下，在Si（111）上成功地生长了In催化、垂直排列和锥形的Si NWs。特别地，研究了衬底温度（TS）和冷却速度（ΔTS/Δt）对Si NWs中平面缺陷、沿[112]方向的孪晶面和层错形成的影响。Si NW生长后，以100℃/240 s的速率将TS从600℃降至室温，观察到垂直于衬底和（111）取向Si NW不同段的孪晶面缺陷。最后，提出了一个简单的模型来解释层错的形成以及由于in -纳米颗粒（in - np）迁移导致的Si-NW长度限制，以及Si- nws中孪晶面缺陷的根本原因。
Stacking-fault-free and planar defect (twinning plane)-free In-catalyzed Si nanowires (NWs) are essential for carrier transport and nanoscale device applications. In this article, In-catalyzed, vertically aligned, and cone-shaped Si NWs on Si(111) were grown successfully, in the vapor–liquid–solid (VLS) mode. In particular, the influences of substrate temperature (TS) and cooling rate (ΔTS/Δt) on the formation of planar defects, twinning planes along the [112] direction, and stacking faults in Si NWs were investigated. When TS was decreased from 600 °C to room temperature at a rate of 100 °C/240 s after Si NW growth, twinning plane defects perpendicular to the substrate and along different segments of (111)-oriented Si NWs were observed. Finally, one simple model was proposed to explain the stacking fault formation as well as Si NW length limitation due to the In-nanoparticle (In-NP) migration, and root causes of the twinning plane defects in the Si-NWs.
影响因子：
38.3
作者：
Allen, Jonathan E.;Hemesath, Eric R.;Lauhon, Lincoln J.
通讯作者：
Lauhon, Lincoln J.