30-kV spin-polarized transmission electron microscope with GaAs–GaAsP strained superlattice photocathode
30-kV spin-polarized transmission electron microscope with GaAs–GaAsP strained superlattice photocathode
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DOI：
10.1063/1.4737177
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发表时间：
2012-07
影响因子：
4
通讯作者：
M. Kuwahara;S. Kusunoki;X. Jin;T. Nakanishi;Y. Takeda;K. Saitoh;T. Ujihara;H. Asano;N. Tanaka
中科院分区：
文献类型：
--
作者：
M. Kuwahara;S. Kusunoki;X. Jin;T. Nakanishi;Y. Takeda;K. Saitoh;T. Ujihara;H. Asano;N. Tanaka
A spin-polarized electron beam has been used as the probe beam in a transmission electron microscope by using a photocathode electron gun with a photocathode made of a GaAs–GaAsP strained superlattice semiconductor with a negative electron affinity (NEA) surface. This system had a spatial resolution of the order of 1 nm for at 30 keV and it can generate an electron beam with an energy width of 0.24 eV without employing monochromators. This narrow width suggests that a NEA photocathode can realize a high energy resolution in electron energy-loss spectroscopy and a longitudinal coherence of 3 × 10−7 m.
