Deformed Honeycomb Lattices of InGaAs Nanowires Grown on Silicon-on-Insulator for Photonic Crystal Surface-Emitting Lasers
Deformed Honeycomb Lattices of InGaAs Nanowires Grown on Silicon-on-Insulator for Photonic Crystal Surface-Emitting Lasers
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DOI：
10.1002/adom.202201809
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发表时间：
2022-12-20
影响因子：
9
通讯作者：
Li, Qiang
中科院分区：
文献类型：
--
作者：
Messina, Cristian;Gong, Yongkang;Li, Qiang
光子晶体可用于实现高性能表面发射激光器并实现新型光子拓扑绝缘体器件。在这项工作中，通过选择性区域金属有机气相外延技术展示了用于此类应用的 GaAs/InGaAs 异质结纳米线平台。纳米线排列成绝缘体上硅基板上的变形蜂窝晶格，以利用四极光子带边模式。形成核壳和轴向异质结构，并通过扫描透射电子显微镜研究其晶体特性。演示了电信 O 波段内拉伸和压缩蜂窝晶格的室温单模激光发射，激光发射阈值低至 1.25 mu J cm(-2)。研究了使用基于 InGaAs 纳米线的蜂窝晶格用于小发散表面发射激光器和拓扑边缘模式激光器的潜力。有限差分时域远场模拟表明，由于面外衍射，可以实现低于 10 度的光束发散。
Photonic crystals can be used to achieve high-performance surface-emitting lasers and enable novel photonic topological insulator devices. In this work, a GaAs/InGaAs heterojunction nanowire platform by selective area metalorganic vapor phase epitaxy for such applications is demonstrated. The nanowires are arranged into deformed honeycomb lattices on silicon-on-insulator substrate to exploit the quadrupolar photonic band-edge mode. Core-shell and axial heterostructures are formed with their crystalline properties studied by scanning transmission electron microscopy. Room-temperature, single mode lasing from both stretched and compressed honeycomb lattices within the telecom-O band, with lasing threshold as low as 1.25 mu J cm(-2) is demonstrated. The potential of using InGaAs nanowire-based honeycomb lattices for small-divergence surface-emitting lasers and topological edge mode lasers is investigated. Finite-difference time-domain far field simulations suggest a sub-10 degrees beam divergence can be achieved thanks to the out-of-plane diffraction.