Electrical characterization of a phenylacetylene-modified silicon surface via mercury probe
Electrical characterization of a phenylacetylene-modified silicon surface via mercury probe
复制标题
通过汞探针对苯乙炔改性硅表面进行电学表征
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
I. Khazi
中科院分区：
文献类型：
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作者：
R. Hiremath;B. G. Mulimani;M. Rabinal;I. Khazi
通过形成具有软汞接触的金属-分子-半导体结，研究了苯乙炔分子对硅(100)表面的影响。分子通过热化学反应通过Si-C键共价键合到半导体表面。XPS测量证实了这些分子的化学键。在黑暗和光照下记录这些结上的电流-电压和电容-电压曲线，以了解有机分子的作用。带有苯乙炔分子的结更理想，具有额外的表面态密度，这是导致光电导猝灭的原因。表面态的存在在低频光电容曲线上反映为清晰的峰。
The influence of phenylacetylene molecules on a silicon (100) surface has been investigated by formation of metal–molecule–semiconductor junctions with soft mercury contacts. Molecules are bonded covalently to the semiconductor surface via Si–C bonds by thermochemical reaction. The chemical bonding of these molecules is confirmed by XPS measurements. Current–voltage and capacitance–voltage curves were recorded under dark and light on these junctions to understand the role of the organic molecules. Junctions with phenylacetylene molecules are more ideal, with an extra density of surface states which are responsible for quenching photoconductivity. The presence of surface states is reflected as well-defined peaks in low frequency photocapacitance curves.