Electrothermal Transient Analysis of GaN Power Amplifier With Dynamic Drain Voltage Biasing
Electrothermal Transient Analysis of GaN Power Amplifier With Dynamic Drain Voltage Biasing
复制标题
具有动态漏极电压偏置的 GaN 功率放大器的电热瞬态分析
DOI：
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发表时间：
2017
影响因子：
3
通讯作者：
R. Ishikawa
中科院分区：
文献类型：
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作者：
S. Hiura;R. Ishikawa
通过电热暂态分析，精确地模拟了功率放大器(PA)由于动态漏极电压偏置引起的AM-AM失真。用于电热模拟的功率放大器中20W氮化镓场效应管(FET)的晶体管模型由热等效电路和Angelov FET模型组成。通过对调制频率为2.5~10 MHz的调幅输入信号的暂态分析，模拟了功放的射频性能。仿真结果表明，功率放大器的温度变化会引起AM-AM磁滞在MHz量级，这与从理论上分析暂态温度的结果是一致的。
AM-AM distortion due to dynamic drain voltage biasing for a power amplifier (PA) has been precisely emulated by an electrothermal transient analysis. A transistor model of a 20-W gallium nitride field-effect transistor (FET) in the PA for the electrothermal simulation is composed of thermal equivalent circuits and the Angelov FET model. Radio frequency performances of the PA were simulated by the transient analysis of amplitude modulation input signals with modulation frequencies from 2.5 to 10 MHz. The simulation results showed that a temperature variation in the PA caused AM-AM hysteresis on the order of MHz, which was consistent with the results obtained from a theoretical analysis of the transient temperature.