Graphene Quantum Dot Reinforced Electrospun Carbon Nanofiber Fabrics with High Surface Area for Ultrahigh Rate Supercapacitors

Graphene Quantum Dot Reinforced Electrospun Carbon Nanofiber Fabrics with High Surface Area for Ultrahigh Rate Supercapacitors
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用于超高倍率超级电容器的高表面积石墨烯量子点增强静电纺碳纳米纤维织物

DOI:
10.1021/acsami.9b22408
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发表时间:
2020
影响因子:
9.5
通讯作者:
Fan Zhuangjun
Fan Zhuangjun
中科院分区:
材料科学2区
文献类型:
--
作者:
Zhao Jing;Zhu Jiayao;Li Yutong;Wang Luxiang;Dong Yue;Jiang Zimu;Fan Chengwei;Cao Yali;Sheng Rui;Liu Anjie;Zhang Su;Song Huaihe;Jia Dianzeng;Fan Zhuangjun

文献摘要

相似文献

高比表面积、良好的导电性和高机械强度对于碳纤维织物(CNF)作为高性能超级电容器电极是重要的。然而,这仍然是一个很大的挑战,因为强大和连续的导电网络和发达的多孔结构之间的权衡。在此,我们报告了一个简单的策略,通过添加石墨烯量子点(GQD)将这些特性整合到静电纺丝CNFs中。均匀嵌入的GQD在构建整个增强相和导电网络中起着至关重要的双功能作用。与纯CNF相比,GQD增强的活化CNF的比表面积从140 m2 g-1大幅度增加到2032 m2 g-1,电导率和强度分别显著提高了5.5倍和2.5倍。深入研究了这种鲁棒加固效应的机理。作为独立式超级电容器电极,织物在1 A g-1下表现出335 F g-1的高电容,并且在100 A g-1下表现出77%的极高电容保持率,在500 A g-1下表现出45%的极高电容保持率。重要的是,对称器件可以在2.2 s内充电到80%的电容,显示出大功率启动电源的巨大潜力。
High surface area, good conductivity, and high mechanical strength are important for carbon nanofiber fabrics (CNFs) as high-performance supercapacitor electrodes. However, it remains a big challenge because of the trade-off between the strong and continuous conductive network and a well-developed porous structure. Herein, we report a simple strategy to integrate these properties into the electrospun CNFs by adding graphene quantum dots (GQDs). The uniformly embedded GQDs play a crucial bifunctional role in constructing an entire reinforcing phase and conductive network. Compared with the pure CNF, the GQD-reinforced activated CNF exhibits a greatly enlarged surface area from 140 to 2032 m2g–1as well as a significantly improved conductivity and strength of 5.5 and 2.5 times, respectively. The mechanism of the robust reinforcing effect is deeply investigated. As a freestanding supercapacitor electrode, the fabric performs a high capacitance of 335 F g–1at 1 A g–1and extremely high capacitance retentions of 77% at 100 A g–1and 45% at 500 A g–1. Importantly, the symmetric device can be charged to 80% capacitance within only 2.2 s, showing great potential for high-power startup supplies.