Electrical performance of the InGaP solar cell irradiated with low energy electron beams
Electrical performance of the InGaP solar cell irradiated with low energy electron beams
复制标题
低能电子束辐照下InGaP太阳能电池的电性能
DOI：
10.1002/pssc.201400322
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
H. Kusawake
中科院分区：
文献类型：
--
作者：
Y. Okuno;S. Okuda;T. Kojima;T. Oka;S. Kawakita;M. Imaizumi;H. Kusawake
研究空间InGaP太阳电池的辐射退化特性具有重要意义。为了了解辐射降解的机制，在真空和环境温度下，用大坂府立大学的Cockcroft-Walton型加速器的电子束照射InGaP太阳能电池的样品。通过理论计算得到了反冲的阈值能量。电子束的能量和注量分别为60 - 400 keV和3×1014 - 3×1016 cm-2。进行光-电流-电压测量。观察到由与磷原子相关的缺陷引起的Isc的劣化，并且通过以高于反冲铟原子的阈值能量的能量照射抑制了劣化。在60 keV的能量下，不发生反冲，Voc发生降解。（© 2015 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
The investigation of the radiation degradation characteristics of InGaP space solar cells is important. In order to understand the mechanism of the degradation by radiation the samples of the InGaP solar cell were irradiated in vacuum and at ambient temperature with electron beams from a Cockcroft-Walton type accelerator at Osaka Prefecture University. The threshold energies for recoil were obtained by theoretical calculation. The energies and the fluences of the electron beams were from 60 to 400 keV and from 3×1014 to 3×1016 cm-2, respectively. The light-current-voltage measurements were performed. The degradation of Isc caused by the defects related to the phosphorus atoms was observed and the degradation was suppressed by irradiation at an energy higher than the threshold energy for recoiling Indium atoms. At an energy of 60 keV, where the recoil does not occur, the Voc was degraded. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)