In-polar InN grown by plasma-assisted molecular beam epitaxy
In-polar InN grown by plasma-assisted molecular beam epitaxy
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DOI：
10.1063/1.2234274
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发表时间：
2006-07
影响因子：
4
通讯作者：
C. Gallinat;G. Koblmüller;Jay S. Brown;S. Bernardis;J. Speck;E. Readinger;H. Shen
中科院分区：
文献类型：
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作者：
C. Gallinat;G. Koblmüller;Jay S. Brown;S. Bernardis;J. Speck;E. Readinger;H. Shen
研究了不同沉积条件对等离子体辅助分子束外延生长In极性InN薄膜性能的影响。GaN缓冲层生长在Ga液滴制度之前的InN沉积显着改善的InN薄膜生长过量的In通量的表面形貌。使用这种方法，在极性氮化铟薄膜已实现与室温电子迁移率高达2250厘米2 scinVs。我们在我们的InN薄膜与无意中纳入杂质，氧和氢的电子浓度。In-polar InN的表面电子累积层为5.11× 1013 cm −2。光学吸收数据的分析提供了一个带隙能量为10.65eV的最厚的InN膜。
We study the effect of different deposition conditions on the properties of In-polar InN grown by plasma-assisted molecular beam epitaxy. GaN buffer layers grown in the Ga-droplet regime prior to the InN deposition significantly improved the surface morphology of InN films grown with excess In flux. Using this approach, In-polar InN films have been realized with room temperature electron mobilities as high as 2250cm2∕Vs. We correlate electron concentrations in our InN films with the unintentionally incorporated impurities, oxygen and hydrogen. A surface electron accumulation layer of 5.11×1013cm−2 is measured for In-polar InN. Analysis of optical absorption data provides a band gap energy of ∼0.65eV for the thickest InN films.