Effect of interface states on electron transport in 4H-SiC inversion layers
Effect of interface states on electron transport in 4H-SiC inversion layers
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DOI：
10.1109/16.944171
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发表时间：
2001-09-01
影响因子：
3.1
通讯作者：
Alok, D
中科院分区：
文献类型：
--
作者：
Arnold, E;Alok, D
从实验和理论上研究了界面态陷阱对SiCMOSFET沟道电导和场效应迁移率的影响。利用不同界面态密度的n沟道MOS器件的霍尔效应测量来确定陷阱对载流子迁移率的影响。量化了电子迁移率与固定界面电荷密度的关系，发现只要迁移率归一化为p0，即没有库仑散射时的值，则电子迁移率与硅中的情况相似。建立了场效应迁移率与实际载流子迁移率之比与费米能级的界面态密度之间的关系。
The effect of trapping in interface states on channel conductance and field-effect mobility in SiC MOSFETs is studied experimentally and theoretically. Hall effect measurements in n-channel MOS devices with varying densities of interface states were used to determine the effect of trapping on carrier mobility. The dependence of electron mobility on immobile interfacial charge density was quantified and was found to be similar to that in silicon, provided that the mobility is normalized to po, the value in the absence of Coulomb scattering. A relationship has been established between the ratio of field-effect mobility to the actual carrier mobility and the density of interface states at the Fermi energy.