Combining the post synthesis ligand-assisted technique and SILAR method to assemble the quantum dots onto the oxide semiconductor photoelectrodes and its applications for solar cells
Combining the post synthesis ligand-assisted technique and SILAR method to assemble the quantum dots onto the oxide semiconductor photoelectrodes and its applications for solar cells
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结合后合成配体辅助技术和SILAR方法将量子点组装到氧化物半导体光电极上及其在太阳能电池中的应用
DOI：
10.1016/j.jallcom.2018.06.188
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发表时间：
2018
影响因子：
6.2
通讯作者：
Xie Tengfeng
中科院分区：
文献类型：
--
作者：
Qiu Qingqing;Chen Yifan;Wu Qiannan;Wang Ping;Wang Dejun;Lin Yanhong;Xie Tengfeng
倒置I型CdS-CdSe核壳结构量子点（简称CdS-CdSe QDs）由于其特殊的光电性能，在QDs敏化太阳能电池中的应用受到了广泛的关注和研究。但这种后合成配体辅助（PSLA）技术需要将预先制备的量子点组装到光阳极上，导致量子点负载量低，太阳能电池的光电性能差。因此，我们将联合收割机与连续离子层吸收反应（SILAR）技术相结合，将量子点组装到光阳极上，以提高量子点的负载量和太阳能电池的光电性能。采用后合成配体辅助技术和SILAR方法成功制备了CdS-CdSe核壳量子点和CdSe量子点（CdS-CdSe/CdSe量子点）复合纳米线电极。应用表面光伏（SPV）、瞬态光伏（TPV）和瞬态光电流（TPC）技术系统研究了电荷分离和转移的动力学过程。这些测量表明，CdS-CdSe/CdSe量子点敏化的TiO 2纳米线光电极由于太阳光利用率的增加而表现出良好的分离效率。使用聚硫化物电解质，在100 mW/cm 2的照射下，获得了最大的光电转换效率（PCE），其中CdS-CdSe/CdSe QD的增强短路电流（Jsc）为17.76 mA/cm− 2，而纯CdS-CdSe QD的Jsc为11.4 mA/cm− 2。为了提高光电转换效率，我们对TiO 2纳米线进行了N掺杂优化，得到了最佳的光电转换效率为3.13%，最大电流密度为18.22 mA/cm 2。
The inverted type-I CdS-CdSe core-shell structure quantum dots (QDs) (denoted as CdS-CdSe QDs) applied in QDs sensitized solar cells (QDSCs) has attracted wide attention and researches due to its special photoelectric properties. But this post synthesis ligand-assisted (PSLA) technique need to assemble the previously prepared QDs onto the photoanode, leads to the low loadings of QDs and poor photoelectric performances of solar cells. Hence, we elaborately combine the PSLA technique and successive ionic layer absorption and reaction (SILAR) method to assemble the QDs onto the photoanode to improve the loadings of QDs and photoelectric properties of solar cells. The anatase TiO2nanowires (NWs) electrode deposited with CdS-CdSe core-shell QDs and CdSe QDs (denoted as CdS-CdSe/CdSe QDs) was successfully prepared by combining the post synthesis ligand-assisted technique and SILAR method. The surface photovoltage (SPV), the transient photovoltage (TPV) and transient photocurrent (TPC) techniques were applied to systematically study the dynamics of charge separation and transfer. These measurements demonstrate that CdS-CdSe/CdSe QDs sensitized TiO2NWs photoelectrodes exhibits favorable separation efficiency due to the increase of sunlight utilization. With the polysulfide electrolyte, the maximum photoelectric conversion efficiency (PCE) with the enhanced short circuit current (Jsc) of 17.76 mA/cm−2for the CdS-CdSe/CdSe QDs and the Jscof 11.4 mA/cm−2for pure CdS-CdSe QDs were obtained under illumination at 100 mW/cm2. To enhance the PCE, the TiO2NWs was optimized by N-doped and the optimized PCE of 3.13% with 18.22 mA/cm2of Jscwas achieved for the QDSCs deposited with CdS-CdSe/CdSe QDs.