Demonstration of a mid-wavelength infrared narrowband thermal emitter based on GaN/AlGaN quantum wells and a photonic crystal
Demonstration of a mid-wavelength infrared narrowband thermal emitter based on GaN/AlGaN quantum wells and a photonic crystal
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DOI：
10.1063/1.4983020
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发表时间：
2017-05
影响因子：
4
通讯作者：
D. Kang;Takuya Inoue;T. Asano;S. Noda
中科院分区：
文献类型：
--
作者：
D. Kang;Takuya Inoue;T. Asano;S. Noda
基于GaN/AlGaN多量子阱的子带间跃迁和光子晶体板的光学共振，我们实验展示了一种窄带低背景发射的热发射器，工作在中波长红外（MWIR）范围内。该器件在4.0 μm波长处表现出单峰窄带热发射，Q因子为93。由于GaN/AlGaN具有良好的热稳定性，可以在700°C以上的高温下稳定工作，从而产生高达93 mW/μm/sr/cm2的强峰值发射强度。由于材料的宽带发射特性和材料的热不稳定性，金属或重掺杂半导体基发射体难以实现这种窄带低背景的MWIR发射体。我们的设备可应用于各种MWIR应用，包括CO2和NOx气体传感系统。
We experimentally demonstrate a thermal emitter with a narrow-bandwidth and low background emission, operating in the mid-wavelength infrared (MWIR) range, based on a combination of intersubband transitions in GaN/AlGaN multiple quantum wells and optical resonance in a photonic crystal slab. The fabricated device exhibits single-peak narrowband thermal emission with a Q factor of 93 at a wavelength of 4.0 μm. Stable operation at high temperatures over 700 °C has been demonstrated owing to the good thermal stability of GaN/AlGaN, which enables the generation of strong peak emission intensity as high as 93 mW/μm/sr/cm2. Such a narrow-band and low-background emitter in the MWIR range has been difficult to realize by metal or heavily doped semiconductor-based emitters due to the broadband emission characteristics of the materials and by GaAs/AlGaAs-based emitters due to the thermal instability of the materials. Our device can be applied to various MWIR applications including CO2 and NOx gas sensing systems.