Wafer-bonded single-crystal silicon slot waveguides and ring resonators
Wafer-bonded single-crystal silicon slot waveguides and ring resonators
复制标题
晶圆键合单晶硅槽波导和环形谐振器
DOI：
10.1063/1.3070541
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发表时间：
2009
影响因子：
4
通讯作者：
H. Atwater
中科院分区：
文献类型：
--
作者：
R. Briggs;M. Shearn;A. Scherer;H. Atwater
我们制作了水平硅槽波导与25 nm的SiO2槽层通过键合薄硅绝缘体晶片。在从键合结构的一侧移除Si衬底和掩埋氧化物之后，光栅耦合波导和环形谐振器被部分蚀刻到Si/SiO2/Si器件层中。光栅表现出高达23%的效率在1550 nm和环形谐振器被测量到有负载的品质因数接近42 000的最低阶横电模式，对应于15 dB/cm的传播损耗。还观察到泄漏的最低阶横磁模式，传播损耗为44 dB/cm。
We fabricated horizontal Si slot waveguides with a 25 nm SiO2 slot layer by bonding thin Si-on-insulator wafers. After removing the Si substrate and buried oxide from one side of the bonded structure, grating-coupled waveguides and ring resonators were partially etched into the Si/SiO2/Si device layers. The gratings exhibit efficiencies of up to 23% at 1550 nm and the ring resonators were measured to have loaded quality factors near 42 000 for the lowest-order transverse-electric mode, corresponding to a propagation loss of 15 dB/cm. The leaky lowest-order transverse-magnetic mode was also observed with a propagation loss of 44 dB/cm.