Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures
Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures
复制标题
Ge/Si0.33Ge0.67/Si(001) p 型调制掺杂异质结构中具有极高的室温二维空穴气体迁移率
DOI：
--
复制
发表时间：
2002
期刊：
影响因子：
--
通讯作者：
E. Parker
中科院分区：
文献类型：
--
作者：
M. Myronov;T. Irisawa;O. Mironov;S. Koh;Y. Shiraki;T. Whall;E. Parker
为了提取Ge/Si0.33Ge0.67/Si(001)p型调制掺杂异质结中不同厚度Ge应变沟道中形成的二维空穴气体(2DHG)的室温漂移迁移率和片载流子密度，测量了295K温度下磁场对磁阻和霍尔电阻的依赖关系，并应用最大熵迁移率谱分析技术.该技术允许唯一地确定存在于平行导电多层半导体异质结中的每组载流子的迁移率和片状载流子密度。在厚度为20 nm的Ge应变沟道中获得了2DHG2940cm2 V-1 S-1(5.11×1011 cm-2)极高的室温漂移迁移率(在单载流子密度下)。
To extract the room-temperature drift mobility and sheet carrier density of two-dimensional hole gas (2DHG) that form in Ge strained channels of various thicknesses in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures, the magnetic field dependences of the magnetoresistance and Hall resistance at temperature of 295 K were measured and the technique of maximum entropy mobility spectrum analysis was applied. This technique allows a unique determination of mobility and sheet carrier density of each group of carriers present in parallel conducting multilayers semiconductor heterostructures. Extremely high room-temperature drift mobility (at sheet carrier density) of 2DHG 2940 cm2 V–1 s–1 (5.11×1011 cm–2) was obtained in a sample with a 20 nm thick Ge strained channel.