Terahertz lasing from silicon by infrared Raman scattering on bismuth centers
Terahertz lasing from silicon by infrared Raman scattering on bismuth centers
复制标题
通过铋中心的红外拉曼散射从硅发出太赫兹激光
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
H. Hübers
中科院分区：
文献类型：
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作者：
S. Pavlov;U. Böttger;R. Eichholz;N. Abrosimov;H. Riemann;V. Shastin;B. Redlich;H. Hübers
太赫兹频率（4.5-5.8 THz）的受激发射是通过低温下硅中铋供体中心红外辐射的电子拉曼散射实现的。观察到的激光发射的斯托克斯位移为 40.53 meV，对应于 1s(A1) 基态和激发 1s(E) 态之间的铋中心内跃迁。与其他基于浅供体中心的拉曼硅激光器相比，该激光器具有较低的光学阈值和最大的频率覆盖范围。时间分辨泵浦光谱能够分离供体激光和拉曼激光。
Stimulated emission at terahertz frequencies (4.5–5.8 THz) has been realized by electronic Raman scattering of infrared radiation on bismuth donor centers in silicon at low temperatures. The Stokes shift of the observed laser emission is 40.53 meV which corresponds to the bismuth intracenter transition between the 1s(A1) ground state and the excited 1s(E) state. The laser has a low optical threshold and the largest frequency coverage in comparison with other Raman silicon lasers based on shallow donor centers. Time-resolved pump spectra enable the separation of donor and Raman lasing.