Epitaxial growth of CrSi2 on (111)Si
Epitaxial growth of CrSi2 on (111)Si
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DOI：
10.1063/1.95301
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发表时间：
1984-09
影响因子：
4
通讯作者：
F. Shiau;H. C. Cheng;L. J. Chen
中科院分区：
文献类型：
--
作者：
F. Shiau;H. C. Cheng;L. J. Chen
在（111）Si上成功生长了外延CrSi2。在Cr沉积过程中，衬底加热在300或400°C比两步退火更有效地促进了外延CrSi2的生长和提高了质量。当样品衬底在300或400°C下加热，然后在1000-1100°C下退火1 h时获得最佳外延。发现取向关系为（0001）CrSi2//(111)Si, (2240)CrSi2//(224)Si, (2020)CrSi2//(202)Si和[1213]CrSi2//[101]Si。发现在规则界面位错网络中存在的位错具有(1)/(6)Burgers向量的边缘或60°型。平均位错间距为270 ~ 320 A。位错间距的实测值与理论期望值的差异是由于CrSi2和Si的热膨胀系数的差异造成的。
Epitaxial CrSi2 has been successfully grown on (111)Si. Substrate heating at 300 or 400 °C during Cr deposition was found to be more effective than two‐step annealing in promoting the growth and improving the quality of epitaxial CrSi2. The best epitaxy was obtained when sample substrates were heated at 300 or 400 °C followed by 1000–1100 °C annealing for 1 h. The orientation relationships were found to be (0001) CrSi2//(111)Si, (2240)CrSi2//(224)Si, (2020)CrSi2//(202)Si, and [1213]CrSi2//[101]Si. Dislocations present in the regular interfacial dislocation network were found to be of edge or 60° type with (1)/(6) Burgers vectors. The average dislocation spacings were measured to be 270–320 A. The discrepancy of the measured and theoretically expected value of dislocation spacing was attributed to the difference in the thermal expansion coefficients of CrSi2 and Si.