Enhancement of electrical properties in polycrystalline BiFeO3 thin films
Enhancement of electrical properties in polycrystalline BiFeO3 thin films
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DOI：
10.1063/1.2385859
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发表时间：
2006-11
影响因子：
4
通讯作者：
K. Yun;D. Ricinschi;T. Kanashima;M. Okuyama
中科院分区：
文献类型：
--
作者：
K. Yun;D. Ricinschi;T. Kanashima;M. Okuyama
通过脉冲激光沉积在 Pt∕TiO2∕SiO2∕Si 基底上生长铁电 BiFeO3 薄膜。 X射线衍射分析表明，BiFeO3薄膜由钙钛矿单相组成，晶体结构呈四方结构，空间群为P4mm。 BiFeO3 薄膜表现出增强的电性能，在最大施加电压 31V 下漏电流密度低至 ∼10−4A/cm2。这种增强的电阻率使作者能够获得巨大的铁电极化值，例如在室温和 80K 下分别达到 110 和 166μC/cm2 的饱和极化值。
Ferroelectric BiFeO3 thin films were grown on Pt∕TiO2∕SiO2∕Si substrates by pulsed-laser deposition. From the x-ray diffraction analysis, the BiFeO3 thin films consist of perovskite single phase, and the crystal structure shows the tetragonal structure with a space group P4mm. The BiFeO3 thin films show enhanced electrical properties with low leakage current density value of ∼10−4A∕cm2 at a maximum applied voltage of 31V. This enhanced electrical resistivity allowed the authors to obtain giant ferroelectric polarization values such as saturation polarizations of 110 and 166μC∕cm2 at room temperature and 80K, respectively.