Cubic MnSb: Epitaxial growth of a predicted room temperature half-metal
Cubic MnSb: Epitaxial growth of a predicted room temperature half-metal
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DOI：
10.1103/physrevb.85.060403
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发表时间：
2012-02-14
影响因子：
3.7
通讯作者：
Bell, Gavin R.
中科院分区：
文献类型：
--
作者：
Aldous, James D.;Burrows, Christopher W.;Bell, Gavin R.
通过严格控制Sb-4/Mn的通量比，采用分子束外延的方法在GaAs上生长出了具有块状立方晶和纤锌矿晶的微晶石外延膜。利用非零温度密度泛函理论从头开始预测了立方晶型的半金属丰度，并将其自旋极化作为磁化强度的函数与已知的半金属NiMnSb进行了比较。在这两种情况下，半金属性在阈值磁化强度降低时损失，对应于温度T* < T- c。与NiMnSb相比，立方MnSb的这个阈值要高得多，对应于T* > 350 K，这使得外延立方MnSb成为半导体中高效室温自旋注入的有希望的候选材料。
Epitaxial films including bulklike cubic and wurtzite polymorphs of MnSb have been grown by molecular beam epitaxy on GaAs via careful control of the Sb-4/Mn flux ratio. Nonzero-temperature density functional theory was used to predict ab initio the half-metallicity of the cubic polymorph and compare its spin polarization as a function of reduced magnetization with that of the well known half-metal NiMnSb. In both cases, half-metallicity is lost at a threshold magnetization reduction, corresponding to a temperature T* < T-C. This threshold is far higher for cubic MnSb compared to NiMnSb and corresponds to T* > 350 K, making epitaxial cubic MnSb a promising candidate for efficient room temperature spin injection into semiconductors.