Origin of electric field distribution in organic field-effect transistor: Experiment and analysis
Origin of electric field distribution in organic field-effect transistor: Experiment and analysis
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DOI：
10.1063/1.3062601
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发表时间：
2009-01
影响因子：
3.2
通讯作者：
M. Weis;T. Manaka;M. Iwamoto
中科院分区：
文献类型：
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作者：
M. Weis;T. Manaka;M. Iwamoto
利用显微光学二次谐波产生技术研究了并五苯有机场效应晶体管（OFET）沟道中的电场分布。在OFET的开和关状态下，在漏极附近以及在源极和漏极处观察到增强的SHG信号。我们的分析表明，拉普拉斯场的形成是在关闭状态的OFET。通过传输线模型计算了在通态下的电场分布，该分布代表了注入载流子在沟道中形成的空间电荷的分布。实验结果证实了理论模型的正确性，表明并五苯可以作为介电材料。在估计的基础上，在导通状态下的电位分布，漏源电流的评估模型提出。
Electric field distribution in the pentacene organic field-effect transistor (OFET) channel is investigated using the microscopic optical second-harmonic generation (SHG). At the on- and off-states of the OFET, enhanced SHG signal was observed near the drain electrode and at the source and drain electrodes. Our analytical analysis indicates that the Laplace field formation is in the off-state of the OFET. The electric field profile in the on-state representing distribution by the space-charge formation in the channel due to injected carriers was calculated by the transmission line model. Theoretical models are confirmed by the experimental results and the result shows that pentacene can be used as a dielectric material. On the basis of estimated potential distribution in the on-state, a model for the evaluation of the drain-source current is proposed.