Enhanced Performance of a CVD MoS2 Photodetector by Chemical in Situ n-Type Doping
Enhanced Performance of a CVD MoS2 Photodetector by Chemical in Situ n-Type Doping
复制标题
通过化学原位 n 型掺杂增强 CVD MoS2 光电探测器的性能
DOI：
10.1021/acsami.9b00856
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发表时间：
2019-03-27
影响因子：
9.5
通讯作者：
Zhang, Yongzhe
中科院分区：
文献类型：
--
作者：
Li, Songyu;Chen, Xiaoqing;Zhang, Yongzhe
过渡金属二硫化物（TMD）是一类有前途的光电器件二维（2D）材料，其独特的特性包括可调谐带隙、非悬挂键以及与大规模制造（例如化学气相沉积（CVD））的兼容性。 MoS2 是最早在光电检测领域得到广泛研究的 TMD 之一。然而，低光响应限制了其在光电探测器中的应用，除非该器件采用超高源漏电压（V-DS）和栅极电压（V-Gs）。在这项工作中，通过使用氯化金水合物的化学原位掺杂方法改善了MoS2光电探测器的光响应。在低V-DS（0.1 V）和V-Gs（0 V）下，响应率和比探测率分别提高到99.9 A/W和9.4 x 10(12) Jones，分别是原始光电探测器的14.6倍和4.8倍。 CVD MoS2 中的氯 n 型掺杂可增强光响应，减少光生电子的俘获并促进光选通效应。这种新颖的掺杂策略可能会带来高性能MoS2光电探测器的巨大应用，并为增强其他二维材料的光响应开辟了新途径。
Transition metal dichalcogenides (TMDs) are a category of promising two-dimensional (2D) materials for the optoelectronic devices, and their unique characteristics include tunable band gap, nondangling bonds as well as compatibility to large-scale fabrication, for instance, chemical vapor deposition (CVD). MoS2 is one of the first TMDs that is well studied in the photodetection area widely. However, the low photoresponse restricts its applications in photo-detectors unless the device is applied with ultrahigh source-drain voltage (V-DS) and gate voltage (V-Gs). In this work, the photoresponse of a MoS2 photodetector was improved by a chemical in situ doping method using gold chloride hydrate. The responsivity and specific detectivity were increased to 99.9 A/W and 9.4 x 10(12) Jones under low V-DS (0.1 V) and V-Gs (0 V), which are 14.6 times and 4.8 times higher than those of a pristine photodetector, respectively. The photoresponse enhancement results from chlorine n-type doping in CVD MoS2 which reduces the trapping of photoinduced electrons and promotes the photogating effect. This novel doping strategy leads to great applications of high-performance MoS2 photodetectors potentially and opens a new avenue to enhance photoresponse for other 2D materials.