Extremely Transparent and Conductive ZnO:Al Thin Films Prepared by Photo-Assisted Metalorganic Chemical Vapor Deposition (photo-MOCVD) Using AlCl3(6H2O) as New Doping Material
Extremely Transparent and Conductive ZnO:Al Thin Films Prepared by Photo-Assisted Metalorganic Chemical Vapor Deposition (photo-MOCVD) Using AlCl3(6H2O) as New Doping Material
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DOI：
10.1143/jjap.36.l1078
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发表时间：
1997-08
影响因子：
1.5
通讯作者：
S. Myong;S. Baik;C. Lee;Woo Young Cho Woo Young Cho-Woo-Young-Cho;Koeng Su Lim Koeng Su Lim-Koeng-Su-Lim
中科院分区：
文献类型：
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作者：
S. Myong;S. Baik;C. Lee;Woo Young Cho Woo Young Cho-Woo-Young-Cho;Koeng Su Lim Koeng Su Lim-Koeng-Su-Lim
以二乙基锌和水为原料，采用光辅助金属有机化学气相沉积技术，在140℃的温度下成功地制备了高透明导电的ZnO：Al薄膜。用水合三氯化铝(AlCl3(6H2O))水溶液中的水蒸气作为掺杂气体。获得了最小电阻率为6.22×10-4Ωcm的氧化锌：铝薄膜。它们在550 nm处的总透过率为91%。在400~1200 nm波长范围内的平均透过率超过91%。本研究首次提出了用AlCl3(6H2O)进行光MOCVD掺铝的新方法，该方法经济、安全，高质量的ZnO：Al可以成功地应用于大面积薄膜太阳电池的透明导电电极。
Extremely transparent and conductive ZnO:Al thin films were successfully prepared by a photo-assisted metalorganic chemical vapor deposition (photo-MOCVD) technique at a temperature of 140° C using diethylzinc and H2O as source materials. The vapor from an aqueous solution of aluminum chloride hydrate ( AlCl3(6H2O)) was used as a doping gas. ZnO:Al thin films with a minimum resistivity of 6.22×10-4 Ω cm were obtained. Their total transmittance at 550 nm was 91%. Moreover, the average transmittance in the wavelength region of 400 nm to 1200 nm was over 91%. The new Al-doping method using AlCl3(6H2O) by the photo-MOCVD, proposed for the first time in this study, is economical as well as safe, and high-quality ZnO:Al can be successfully applied to a transparent conductive electrode for large area thin-film solar cells.