Transmission electron microscope investigation of dislocation loops in Si-doped GaAs crystals
Transmission electron microscope investigation of dislocation loops in Si-doped GaAs crystals
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透射电子显微镜研究 Si 掺杂 GaAs 晶体中的位错环
DOI：
10.1088/0268-1242/7/1a/057
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发表时间：
1992
影响因子：
1.9
通讯作者：
Y. D. Guo
中科院分区：
文献类型：
--
作者：
T. P. Chen;L. J. Chen;T. S. Huang;Y. D. Guo
用常规透射电子显微镜（CTEM）和高分辨透射电子显微镜（HRTEM）研究了掺硅GaAs晶体中的位错环。除了位于（110）面上的棱柱位错环和位于（111）面上的断层位错环外，还首次发现了位于（111）面上、Burgers矢量为1/2（110）的具有间隙特征的棱柱位错环。部分位错环表现出部分断裂和部分棱柱的特征。这一观察结果表明，位于（111）面上的棱柱位错环可能是由两个1/6（112）Shockley部分位错的产生和运动穿过层错而由断层位错环转化而来的。由于高分辨透射电子显微镜观察到的位错环都有一个额外的平面，因此可以得出结论，位错环的形成是由晶体引起的。
Dislocation loops in Si-doped GaAs crystals have been studied by conventional transmission electron microscopy (CTEM) and high-resolution transmission electron microscopy (HRTEM). In addition to the prismatic dislocation loops lying on (110) planes and the faulted loops lying on (111) planes, the existence of prismatic dislocation loops lying on (111) planes with 1/2 (110) Burgers vectors and of interstitial character was identified for the first time. Some of the dislocation loops exhibited partly faulted and partly prismatic characteristics. This observation indicates that the prismatic dislocation loops lying on (111) planes may be converted from faulted loops by the generation and movement of two 1/6 (112) Shockley partial dislocations across the stacking fault. Because all the dislocation loops studied by HRTEM have an extra plane, it was concluded that interstitials are responsible for the formation of dislocation loops.