Electrically pumped lasing from Ge Fabry-Perot resonators on Si
Electrically pumped lasing from Ge Fabry-Perot resonators on Si
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DOI：
10.1364/oe.23.014815
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发表时间：
2015-06-01
期刊：
影响因子：
3.8
通讯作者：
Schulze, Joerg
中科院分区：
文献类型：
--
作者：
Koerner, Roman;Oehme, Michael;Schulze, Joerg
观察到了电泵浦n型掺杂Ge边发射器件的室温激光。边缘发射极是通过劈裂硅锗波导异质二极管形成的，通过法布里-珀罗谐振腔提供光反馈。器件的电致发光光谱在1660 nm和1700 nm之间的波长处显示出光漂白和强度增益。这符合理论预测的n型Ge材料系统的行为。随着500 kA/cm（2）的进一步脉冲电注入，有可能达到这种边缘发射器的激光阈值。不同的长度和宽度的设备已被调查，以保持最佳的增益吸收比。(C)2015美国光学学会
Room temperature lasing from electrically pumped n-type doped Ge edge emitting devices has been observed. The edge emitter is formed by cleaving Si-Ge waveguide heterodiodes, providing optical feedback through a Fabry-Perot resonator. The electroluminescence spectra of the devices showed optical bleaching and intensity gain for wavelengths between 1660 nm and 1700 nm. This fits the theoretically predicted behavior for the n-type Ge material system. With further pulsed electrical injection of 500 kA/cm(2) it was possible to reach the lasing threshold for such edge emitters. Different lengths and widths of devices have been investigated in order to maintain best gain-absorption ratios. (C) 2015 Optical Society of America